Three dimensional semiconductor memory device and method of fabricating the same

ABSTRACT

Provided are a three dimensional semiconductor memory device and a method of fabricating the same. The method includes forming a stepwise structure by using mask patterns and a sacrificial mask pattern formed on the mask patterns as a consumable etch mask.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. application Ser. No. 12/901,025filed on Oct. 8, 2010, now U.S. Pat. No. 7,972,955 which claims priorityto Korean Patent Application No. 10-2009-0099370, filed on Oct. 19,2009, in the Korean Intellectual Property Office, the entire contents ofwhich are hereby incorporated by reference.

BACKGROUND

The present disclosure herein relates to a three dimensionalsemiconductor device and a method of fabricating the same.

Higher integration of semiconductor devices is required to satisfyconsumer demands for superior performance and inexpensive prices. In thecase of semiconductor memory devices, since their integration is animportant factor in determining product prices, increased integration isespecially required. In the case of typical two-dimensional or planarsemiconductor memory devices, since their integration is mainlydetermined by the area occupied by a unit memory cell, integration isgreatly influenced by the level of a fine pattern forming technology.However, the extremely expensive semiconductor equipment needed toincrease pattern fineness sets a practical limitation on increasingintegration for two-dimensional or planar semiconductor devices.

To overcome such a limitation, three dimensional memory semiconductormemory devices having three-dimensionally arranged memory cells havebeen proposed. However, in order to mass-produce three dimensionalsemiconductor devices, a process technology that provides a lowermanufacturing cost per bit than two-dimensional memory devices whilemaintaining or exceeding their level of reliability is required.

SUMMARY

The present disclosure provides a method of fabricating a threedimensional semiconductor device that can reduce manufacturing costs.

The present disclosure also provides a method of fabricating a threedimensional semiconductor device that can reduce manufacturing costswhile enhancing reliability of interconnection lines.

The present disclosure further provides a three dimensionalsemiconductor memory device having enhanced reliability and reducedmanufacturing costs.

Embodiments of the present disclosure provide methods of fabricating athree dimensional semiconductor device comprising forming a layerstructure comprising a plurality of sequentially stacked layers on asubstrate; forming a mask structure on the layer structure; forming asacrificial mask pattern on the mask structure; and forming a patternstructure comprising a stepwise contact structure by patterning thelayer structure by using the mask structure and the sacrificial maskpattern as a consumable etch mask.

In some embodiments of the present disclosure, three dimensionalsemiconductor devices may comprise: a substrate comprising a cell arrayregion and a contact region; an interconnection structure comprising aplurality of stacked horizontal electrodes and disposed on thesubstrate; and bit lines disposed on the cell array region, whereinwidths of the horizontal electrodes decrease as the horizontalelectrodes are further away from the substrate, so that theinterconnection structure has a stepwise shape in the contact region. Atthis time, a sidewall of one of the horizontal electrodes meets thebelow equation

${{{L_{n}\left( y_{m} \right)} - {L_{n}\left( y_{0} \right)}} < \frac{{L_{n}\left( y_{0} \right)} - {L_{n + 1}\left( y_{0} \right)}}{s}},$

within a range of y_(m) meeting the condition of |y_(m)−y₀|<y₁, where y₀is a y coordinate of a reference point, y_(m) is a y coordinate of ameasured point, L_(n)(y_(m)) is a distance between a sidewall of a n-thconductive pattern in which the y coordinate is y_(m), and a sidewall ofthe bit line most adjacent to the sidewall of the n-th conductivepattern, s is a value of 2 to 20, and y₁ is a length shorter than alength of bit line.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the inventive concept, and are incorporated in andconstitute a part of this specification. The drawings illustrateexemplary embodiments of the inventive concept and, together with thedescription, serve to explain principles of the inventive concept. Inthe drawings:

FIG. 1 is a schematic view for describing an embodiment of asemiconductor memory chip according to technical spirit of the inventiveconcept;

FIG. 2 is a flow diagram for describing a method of fabricating a threedimensional semiconductor device according to a first embodiment basedon the technical spirit of the inventive concept;

FIGS. 3 through 18 are perspective views illustrating a method offabricating a three dimensional semiconductor device according to afirst embodiment based on the technical spirit of the inventive concept;

FIG. 19 is a perspective view of a three dimensional semiconductordevice viewed in a different direction from FIG. 18;

FIGS. 20 and 21 are detailed views for describing a modification of thefirst embodiment according to the technical spirit of the inventiveconcept;

FIG. 22 a flow diagram for describing a method of fabricating a threedimensional semiconductor device according to a second embodiment basedon the technical spirit of the inventive concept;

FIGS. 23 through 30 are perspective views for describing a method offabricating a three dimensional semiconductor device according to asecond embodiment based on the technical spirit of the inventiveconcept;

FIGS. 31 and 32 are plan view and graph for describing one of technicalfeatures that may found in a three dimensional semiconductor deviceaccording to some embodiments based on the technical spirit of theinventive concept;

FIGS. 33 through 35 are perspective views for describing a threedimensional semiconductor device according to a third embodiment basedon the technical spirit of the inventive concept;

FIG. 36 is a block diagram of a memory card provided with a flash memorydevice according to an embodiment of the inventive concept; and

FIG. 37 is a block diagram of an information processing system providedwith a flash memory system according to some embodiments of theinventive concept.

DETAILED DESCRIPTION

The above objects, other objects, features and advantages of the presentdisclosure will be better understood from the following description ofpreferred embodiments taken in conjunction with the accompanyingdrawings. The present disclosure may, however, be embodied in differentforms and should not be constructed as limited to the embodiments setforth herein. Rather, these embodiments are provided so that thisdisclosure will be thorough and complete, and will fully convey thescope of the present disclosure to those skilled in the art.

In the specification, it will be understood that when a layer (or film)is referred to as being ‘on’ another layer or substrate, it can bedirectly on the other layer or substrate, or intervening layers may alsobe present. Also, in the drawings, the dimensions of layers and regionsare exaggerated for clarity of illustration. Also, though terms like afirst, a second, and a third are used to describe various regions andlayers in various embodiments of the present disclosure, the regions andthe layers are not limited to these terms. These terms are used only todiscriminate one region or layer from another region or layer.Therefore, a layer referred to as a first layer in one embodiment can bereferred to as a second layer in another embodiment. An embodimentdescribed and exemplified herein includes a complementary embodimentthereof.

FIG. 1 is a schematic view for describing an embodiment of asemiconductor memory chip.

Referring to FIG. 1, the semiconductor memory chip according to thepresent embodiment may include a cell array region CAR, a peripheralcircuit region PPR, a sense amp region SAR, a decoding circuit regionDCR, and a word line contact region WCTR. In the cell array region CAR,a plurality of memory cells and a plurality of bit lines and word linesfor electrical connection with the plurality of memory cells aredisposed. In the peripheral circuit region PPR, circuits for operatingmemory cells are disposed, and in the sense amp region SAR, circuits forreading information stored in the memory cells are disposed. The wordline contact region WCTR may be disposed between the cell array regionCAR and the decoding circuit region DCR, and an interconnectionstructure for electrically connecting the word lines and the decodingcircuit region DCR may be disposed in the word line contact region WCTR.

The word lines may extend from the cell array region CAR to the wordline contact region WCTR, and may form a stepwise structure in the wordline contact region WCTR for ease in electrically connecting with thecircuits of the decoding circuit region DCR.

FIG. 2 is a flow diagram for describing a method of fabricating a threedimensional semiconductor device according to a first embodiment basedon the technical spirit of the inventive concept. FIGS. 3 through 18 areperspective views illustrating a method of fabricating a threedimensional semiconductor device according to a first embodiment basedon the technical spirit of the inventive concept. FIG. 19 is aperspective view of a three dimensional semiconductor device viewed in adifferent direction from FIG. 18.

Referring to FIGS. 2 and 3, a thin layer structure 100 is formed on asubstrate 10 (S1). The substrate 10 may include a cell array region, aperipheral circuit region and a contact region, and these regions mayinclude the same technical features as those described with reference toFIG. 1. The substrate 10 may be one of a material (e.g., silicon,gallium arsenide, indium phosphide, and so on) having semiconductorproperties, an insulator (e.g., glass), a semiconductor covered with aninsulator, and a conductor.

The thin layer structure 100 may include a plurality of insulatinglayers 121-128 (120) and a plurality of sacrificial layers 131-137(130). The insulating layers 120 and the sacrificial layers 130 may bealternately and repeatedly stacked as shown in the figures. Theinsulating layer 120 and the sacrificial layer 130 may be formed ofdifferent materials so that the insulating layer 120 and the sacrificiallayer 130 may have an etch selectivity with respect to each other. Forexample, the insulating layer 120 may be chosen from a silicon oxidelayer and a silicon nitride layer, and the sacrificial layer 130 may bea material layer, which may be chosen from a silicon layer, a siliconoxide layer, a silicon carbide layer and a silicon nitride layer and maybe different from the insulating layer 120.

According to an embodiment, the fabricating method may, prior to formingthe thin layer structure 100, further include forming a conductiveregion (not illustrated) in or on the substrate 10. If the substrate 10comprises a semiconductor material, the conductive region may be animpurity region formed in the substrate 10. If the substrate 10comprises an insulator, the conductive region may be a conductive layeror a conductive pattern disposed on the substrate 10. According to anembodiment, the conductive region may be used as a common source line.

Referring to FIGS. 2 and 4 through 6, semiconductor patterns 205penetrating the thin layer structure 100 are formed (S2) as explainedbelow. In particular, the forming S2 of the semiconductor patterns 205may include, after forming openings 105 penetrating the thin layerstructure 100 as shown in FIG. 4, forming a semiconductor layer 200 andfirst buried patterns 210 sequentially filling the openings 105 as shownin FIG. 5, and patterning the semiconductor layer 200 to formsemiconductor patterns 205 as shown in FIG. 6.

In some embodiments, the openings 105 may be formed so as to expose atop surface of the substrate 10 or the conductive region. As a result,the semiconductor layer 200 may be formed so as to contact the topsurface of the substrate 10 or the top surface of the conductive region.Horizontal sections of the openings 105 may be a rectangular shapehaving at least 10 or more aspect ratio. Alternatively, according toanother embodiment, the horizontal sections may be formedtwo-dimensionally while having a substantially cylindrical orellipsoidal shape.

The semiconductor layer 200 may be a semiconductor material (e.g.,polysilicon), which is formed by using a chemical vapor deposition (CVD)technique and has a polycrystalline structure. In this case, thesemiconductor layer 200 may be formed so as to cover inner walls of theopenings 105 in a substantially conformal manner. Alternatively, thesemiconductor layer 200 may be one of semiconductor materials formed byusing, for example, an epitaxial technique, an atomic layer deposition(ALD) technique or a CVD technique, and may have one of apolycrystalline structure, a single crystalline structure, an amorphousstructure or combinations thereof.

The first buried patterns 210 may be formed to fill the openings 105 inwhich the semiconductor layer 200 is formed, and may include at leastone of insulating materials. For example, the first buried patterns 210may be silicon oxides or insulating materials formed by using aspin-on-glass (SOG) technique. According to an embodiment, in a gasambient including hydrogen or heavy hydrogen, a hydrogen annealing maybe performed to process the resultant structure in which thesemiconductor layer 200 is formed. The hydrogen annealing may curecrystal defects existing in the semiconductor layer 200.

Referring to FIG. 6, the semiconductor layer 200 may be patterned toform two or more semiconductor patterns 205 separated from each other inthe opening 105, and then second buried patterns 220 filling a spacebetween the semiconductor patterns 205 may be further formed.

The forming of the semiconductor patterns 205 may include exposing aninner sidewall of the semiconductor layer 200 by patterning, i.e.,removing a portion of the first buried patterns 210 using an etch maskpattern (not illustrated) arranged perpendicular to the longitudinaldirection of the openings, and horizontally separating the semiconductorpatterns 205 by etching the inner sidewall of the exposed semiconductorlayer 200 until the sidewall of the thin layer structure 100 is exposed.

The second buried patterns 220 may be formed of one or more insulatingmaterials such as a silicon dioxide. According to an embodiment, theforming of the second buried patterns 220 may include forming a secondburied layer filling a space between the separated semiconductorpatterns 205, and planarizing the second buried layer and thesemiconductor layer 200 until a top surface of the thin layer structure100 is exposed. In this case, nodes of the semiconductor patterns 205may be separated, so that the semiconductor patterns 205 may be locallyformed in the opening 105 adjacent the second buried pattern 220.

Referring to FIGS. 2 and 7 through 9, a horizontal interconnection lineforming process of forming conductive patterns 260 (FIG. 9), which areformed to face sidewalls of the semiconductor patterns 205, is performed(S3). The horizontal interconnection line forming process S3 may includeforming trenches 230 penetrating some or all of thin layers constitutingthe thin layer structure 100 between the semiconductor patterns 205(S31), and replacing the sacrificial layers of the thin layer structure100 with conductive layers (S32).

In detail, as shown in FIG. 7, the trenches 230 may be formed to beseparated from the semiconductor patterns 205 and to expose sidewalls ofthe sacrificial layers 130 and the insulating layers 120. In plan view,the trenches 230 may be formed in a line shape or rectangular shape, andin cross-sectional view, the trenches 230 may be formed so as to exposeat least a top surface of the lowermost layer of the sacrificial layers130. In some embodiments, the conductive region (not shown), which maybe used as a common source line, may be formed locally in the substrate10 below the trenches 230. The conductive region may be formed throughan ion implantation process, which uses the thin layer structure 100having the trenches 230 as an ion implantation mask.

The replacing S32 may include selectively removing the sacrificiallayers 130 of which sidewalls are exposed by the trenches 230 to formrecess regions 240 between the insulating layers 120 as shown in FIG. 8,and forming an information storage layer 250 and a conductive pattern(e.g. horizontal electrode) 260 in each of the recess regions 240 asshown in FIG. 9.

The recess regions 240 may be gap regions horizontally extending betweenthe insulating layers 120 from the trenches 230, and may be formed so asto expose the sidewalls of the semiconductor patterns 205. The formingof the recess regions 240 may include isotropically etching thesacrificial layers 130 by using an etch recipe having an etchselectivity with respect to the insulating layers 120. For example, ifthe sacrificial layers 130 are silicon nitrides and the insulatinglayers 120 are silicon oxides, the etching may be performed by using anetchant including, for example, phosphoric acid.

The forming of the information storage layer 250 and the conductivepattern 260 may include forming the information storage layer 250 and aconductive layer sequentially covering the trenches 230 and the recessregions 240, and removing the conductive layer in the trenches 230 toleave the conductive patterns 260 in the recess regions 240. Thereafter,as shown in FIG. 9, an electrode separating pattern 265 filling thetrenches 230 may be additionally formed.

The information storage layer 250 may be formed by using a depositiontechnique (e.g., CVD or ALD) that can provide superior step coverage,and may be formed at a thickness less than half the thickness of therecess regions 240. Therefore, the information storage layer 250 may beformed so as to cover, in a substantially conformal manner, theresultant structure in which the recess regions 240 are formed.According to an embodiment of the inventive concept for a flash memory,the information storage layer 250 may include a charge storage layer.For example, the information storage layer 250 may include one or moreinsulating layers chosen from a trap insulating layer, a floating gateelectrode, and conductive nano dots. According to an embodiment, theinformation storage layer 250 may further include a tunnel insulatinglayer and a blocking insulating layer. The tunnel insulating layer mayinclude at least one of a silicon oxide layer and a silicon nitridelayer, and the blocking insulating layer may include one or more layerschosen from an aluminum oxide layer, a silicon oxide layer and a siliconnitride layer.

The conductive layer may be formed so as to fill the recess regions 240and the trenches 230, which are covered with the information storagelayer 250. The conductive layer may include one or more layers chosenfrom a doped silicon layer, a tungsten layer, metal nitride layers andmetal silicides. Meanwhile, since the technical spirit of the inventiveconcept is not limited to flash devices, the information storage layer250 and the conductive layer may be modified variously in terms ofmaterial, structure and the like.

The removing of the conductive layer in the trench 230 may includeanisotropically etching the conductive layer by using the uppermostinsulating layer 120 constituting the thin layer structure 100 or a hardmask pattern (not shown) additionally formed on the uppermost insulatinglayer 120. If the conductive layer is removed in the trench 230, theconductive layer forms the conductive patterns 260 separated from eachother in a vertical direction. The conductive patterns 260 may be formedlocally in the recess regions 240 and may constitute a horizontalinterconnection structure 260S.

The forming of the electrode separating pattern 265 may include fillingthe trench 230, from which the conductive layer is removed, with aninsulating material. According to an embodiment, the electrodeseparating pattern 265 may include one or more layers chosen from asilicon oxide layer, a silicon nitride layer and a silicon oxynitridelayer.

Referring to FIGS. 2 and 10 through 17, the horizontal interconnectionstructure 260S is patterned to form a stepwise contact structure 264(FIG. 17) on the word line contact region WCTR (S4). In detail, thisprocess S4 may include forming a mask structure 300S on the horizontalinterconnection structure 260S (S41), forming a sacrificial mask pattern310 (FIG. 12, for example) on the mask structure 300S (S42), and formingthe stepwise contact structure 264 by patterning the horizontalinterconnection structure 260S (S43).

The mask structure 300S may include a plurality of mask patterns formedin a direction crossing the trenches 230. The mask structure 300S mayinclude first mask patterns 301 and second mask patterns 302 which arealternately and repeatedly arranged, and the first mask patterns 301 andthe second mask patterns may be formed of materials having an etchselectivity with respect to each other. For example, the first maskpatterns 301 may be formed of a material chosen from silicon oxide,silicon nitride, silicon oxynitride, polycrystalline silicon, amorphoussilicon, silicon carbide, metallic materials, and silicide materials,and the second mask patterns 302 may be formed of a material chosen fromsilicon oxide, silicon nitride, silicon oxynitride, polycrystallinesilicon, amorphous silicon, silicon carbide, metallic materials, andsilicide materials and is different from the material constituting thefirst mask pattern 301.

According to an embodiment, the second mask patterns 302 may be formedof polycrystalline silicon having a conductive type which is differentfrom that of the semiconductor patterns 205, and the first mask patterns301 may be formed by patterning the uppermost layer (e.g., 128) of theinsulating layers 120 constituting the thin layer structure 100.According to another embodiment, the first and second mask patterns 301,302 may be formed at different heights, unlike shown in the figures. Forexample, the second mask patterns 302 may be formed on the insulatinglayer 120 used as the first mask patterns 301.

The forming S41 of the mask structure 300S may include forming the firstmask patterns 301 crossing the trenches 230 by patterning a portion ofthe insulating layer 120 constituting the thin layer structure 100 asshown in FIG. 10, and forming the second mask patterns 302 between thefirst mask patterns 301 as shown in FIG. 11.

According to some embodiments, as shown in FIG. 10, upper regions of thefirst buried pattern 210 and a portion of the semiconductor pattern 205may be etched together while forming the first mask patterns 301. Inthis case, grooves 280 having top surfaces having a height lower than atop surface of the first mask pattern 301 may be formed at the upperportions of the semiconductor patterns 205. While the second maskpatterns 302 are formed, the grooves 280 may be filled with the samematerial as the second mask patterns 302. According to this embodiment,the second mask pattern 302 may include a polycrystalline silicon layerhaving a conductive type different from that of the semiconductorpattern 205.

The sacrificial mask pattern 310 may be formed of one or more materialshaving an etch selectivity with respect to materials constituting themask structure 300S, the insulating layers 120 and the horizontalinterconnection structure 260S. According to an embodiment, thesacrificial mask pattern 310 may be formed by one or more photoresistmaterials or one or more organic materials. Also, a thickness of thesacrificial mask pattern 310 may be greater than a width of the stepwisecontact structure.

The patterning S43 of the horizontal interconnection structure 260S mayinclude a consumable etch process, which uses the mask structure 300Sand the sacrificial mask pattern 310 as a consumable etch mask as shownin FIGS. 12 through 17. In detail, the consumable etch process mayinclude a plurality of sub-patterning processes, and each of theplurality of sub-patterning processes shown in FIGS. 12 through 17 mayinclude a horizontal etch process and a vertical etch process.

The horizontal etch process may be performed so as to gradually reducean area occupied by the mask structure 300S and the sacrificial maskpattern 310, and may include a first horizontal etch processhorizontally etching a sidewall of the sacrificial mask pattern 310, anda second horizontal etch process selectively removing at least one ofmask patterns constituting the mask structure 300S. The first horizontaletch process may expose a top surface of at least one of the maskpatterns 301, 302 covered by the sacrificial mask pattern 310 in theprevious sub-patterning process by horizontally extending a regionexposed by the sacrificial mask pattern 310. The second horizontal etchprocess may include selectively removing at least one of the maskpatterns 301, 302 newly exposed through the first horizontal etchprocess. An area of the insulating layers 120 and the horizontalinterconnection structure 260S exposed as the mask patterns 301, 302 areremoved may extend as the sub-patterning processes are repeatedlyperformed.

The first horizontal etch process may be performed by using an isotropicdry etch process or a wet etch process. Also, the first horizontal etchprocess may be performed by using a blanket etch process, so that asidewall and an upper surface of the sacrificial mask pattern 310 may beetched together. Therefore, as shown in FIGS. 12 through 17, width andthickness of the sacrificial mask pattern 310 may be reduced as thesub-patterning processes are repeatedly performed (i.e.,D1>D2>D3>D4>D5>D6 and t1>t2>t3>t4>t5>t6).

The number of the mask patterns 301, 302 removed in the horizontal etchprocess may be one or two. If the number of the mask patterns removed isone, one of the first mask patterns 301 may be removed after the oddsub-patterning process, and one of the second mask patterns 302 may beremoved after the even sub-patterning process. That is, the secondhorizontal etch processes of the odd sub-patterning processes may use anetch recipe that can selectively remove the first mask pattern 301, andthe second horizontal etch processes of the even sub-patterningprocesses may use an etch recipe that can selectively remove the secondmask pattern 302.

The vertical etch process may include etching the horizontalinterconnection structure 260S and the insulating layers 120 by usingthe sacrificial mask pattern 310 and the mask patterns 301, 302 as etchmasks. In the vertical etch process along a vertical direction, thesub-patterning process may be performed so as to remove one of theconductive patterns 260 and one of the insulating layers 120. Also, inthe vertical etch process along a horizontal direction, regions of thehorizontal interconnection structure 260S and the insulating layers 120etched in the vertical etch process may be below the mask patterns 301,302 removed through the corresponding sub-patterning process and thesub-patterning process performed previously to the correspondingsub-patterning process. That is, the horizontal interconnectionstructure 260S and the insulating layer 120, which are patterned in aprevious sub-patterning process, may be additionally patterned during apredetermined sub-patterning process.

Therefore, the cumulative number of the sub-patterning processesperformed with respect to the horizontal interconnection structure 260Smay vary according to a distance from the cell array region CAR or thesemiconductor patterns 205. According to a difference in the cumulativenumber of the sub-patterning processes, as shown in FIGS. 12 through 17,the horizontal interconnection structure 260S may be formed so as tohave a stepwise contact structure 264 in the word line contact regionWCTR.

Referring to FIGS. 2, 18 and 19, after the sacrificial mask pattern 310is removed, word line plugs WPLG connected with the horizontalinterconnection structure 260S and global word lines GWL connected withthe word line plugs WPLG are formed (S5). As aforementioned, since thehorizontal interconnection structure 260S is formed so as to have astepwise contact structure 264 in the word line contact region WCTR, theconductive patterns 260 formed at different heights may be respectivelyconnected with the word lines plugs WPLG, which are formed at the sametime by using the same or similar process.

On the other hand, bit line plugs BPLG connected with the semiconductorpatterns 205 and bit lines BL connecting the bit line plugs BPLG may beadditionally formed. The bit lines BL may be formed in a directioncrossing the trench 230 or the conductive patterns 260 as shown in thefigures. According to an embodiment, the bit line plug BPLG may beformed by using the process of forming the word line plug WPLG.Similarly, the bit line BL may be formed by using the process of formingthe global word line GWL.

According to the present embodiment, the stacked conductive patterns 260may be used as a string select line SSL, a ground select line GSL andword lines WL. For example, the uppermost layer and the lowermost layerof the conductive patterns 260 may be used as a string select line SSLand a ground select line GSL, respectively, and the conductive patterns260 between the uppermost layer and the lowermost layer may be used asword lines. Alternatively, as shown in FIGS. 18 and 19, the twouppermost layers of conductive patterns 260 may be used as the stringselect line SSL. The conductive patterns 260 used as the string selectline SSL may be horizontally separated. In this case, two or more stringselect lines SSL electrically separated from each other may be disposedat substantially the same height. Alternatively, word lines included ina single block may be connected with each other in the word line contactregion WCTR to have a comb-shape or a finger-shape.

FIGS. 20 and 21 are detailed views for describing a modification of thefirst embodiment according to the technical spirit of the inventiveconcept. Specifically, FIG. 20 is a detailed view of region 95 of FIG.12 as viewed from a different direction, and FIG. 21 is a detailed viewof region 96 of FIG. 19.

As shown in FIG. 20, a sidewall of the sacrificial mask pattern 310 maybe spaced apart from sidewalls of the underlying mask patterns 301, 302.That is, while the sub-patterning processes are performed, the sidewallof the sacrificial mask pattern 310 is not aligned with the sidewalls ofthe mask patterns 301, 302, so that top edge surfaces of the maskpatterns 301, 302 may be partially exposed. In this case, while thehorizontal etch process and the vertical etch process constituting thesub-patterning processes are performed, the exposed top edge surfaces ofthe mask patterns 301, 302 may be recessed downwardly, and the recessedregions of the mask patterns 301, 302 may be reflected in the conductivepattern 260 in a subsequent sub-patterning process. As a result, theconductive pattern 260 may include two portions having differentthicknesses respectively and connected to each other in the word linecontact region WCTR as shown in FIG. 21. That is, at least one edge 260e of the conductive patterns 260 may be formed in a stepwise structure.

FIG. 22 is a flow diagram for describing a method of fabricating a threedimensional semiconductor device according to a second embodiment basedon the technical spirit of the inventive concept. FIGS. 23 through 30are perspective views for describing a method of fabricating a threedimensional semiconductor device according to a second embodiment basedon the technical spirit of the inventive concept. For simplicity ofdescription, description on technical features overlapping those of theforegoing first embodiment may be omitted.

Comparing FIGS. 2 and 22, the fabricating method according to the secondembodiment has a difference in the process flow from that according tothe first embodiment. In detail, a series of process operations S3 forforming the horizontal interconnection structure 260S may be performedafter a series of process operations S4 for forming a stepwisestructure.

Referring to FIGS. 22 through 24, a thin layer structure 100 is formed(S1), and semiconductor patterns 205 penetrating the thin layerstructure 100 are formed (S2). The thin layer structure 100 may includea plurality of insulating layers 121-128 (120) and a plurality ofsacrificial layers 131-137 (130), and may be formed identically as thatof the first embodiment described with reference to FIG. 3.

The forming S2 of the semiconductor patterns 205 may include formingpenetrating holes 106 penetrating the thin layer structure 100 as shownin FIG. 23, and then forming semiconductor patterns 205 and first buriedpatterns 210 sequentially filling the penetrating holes 106 as shown inFIG. 24. As shown in FIG. 23, the penetrating holes 106 of the presentembodiment may be formed not in a line shape shown in FIG. 4 but in ahole shape. The semiconductor patterns 205 and the first buried patterns210 may be formed by a damascene process which uses the penetratingholes 106 as a mold. Therefore, the semiconductor patterns 205 accordingto the present embodiment may have a substantially cylindrical shape orcup shape whose bottom surface is closed. Materials for thesemiconductor patterns 205 and the first buried patterns 210 may be thesame as those in the first embodiment.

Referring to FIGS. 22 and 25, a mask structure 300S is formed on thethin layer structure 100 (S41). In the case of the first embodiment, themask structure 300S is formed on the resultant structure in which thehorizontal interconnection structure 260S is formed, but in the case ofthe present embodiment, the mask structure 300S is formed on the thinlayer structure 100 including the sacrificial layers 130.

The mask structure 300S may include a plurality of mask patterns 301,302 formed in a direction perpendicular to the later-formed trenches 230(see FIG. 29). The mask patterns 301, 302 may include first maskpatterns 301 and second mask patterns 302 which are alternately andrepeatedly arranged, and the first mask patterns 301 and second maskpatterns 302 may be formed of materials having an etch selectivity withrespect to each other. For example, the first mask patterns 301 may beformed of a material chosen from silicon oxide, silicon nitride, siliconoxynitride, polycrystalline silicon, amorphous silicon, silicon carbide,metallic materials, and silicide materials, and the second mask patterns302 may be formed of a material chosen from silicon oxide, siliconnitride, silicon oxynitride, polycrystalline silicon, amorphous silicon,silicon carbide, metallic materials, and silicide materials and isdifferent from the material constituting the first mask pattern 301.

The mask structure 300S according to the present embodiment may beformed in the same structure as that according to the first embodiment.However, since the present embodiment may have a difference in processflow from the foregoing embodiment, materials etched in the consumableetch process S43, which uses the mask structure 300S as an etch mask,may be different in the two embodiments. That is, in the case of thefirst embodiment, the consumable etch process may include etching theconductive patterns 260, but in the case of the second embodiment, theconsumable etch process may include etching the sacrificial layers 130constituting the thin layer structure 100 as will be described withreference to FIGS. 26 and 27. Thus, since an etch target material in theconsumable etch process S43 of the second embodiment is different fromthat in the consumable etch process S43 of the first embodiment,materials constituting the first mask patterns 301 and second maskpatterns 302 may be modified from those of the first embodiment.However, it will be apparent to those skilled in the art that optimalmaterials for providing the first mask patterns 301 and second maskpatterns 302 may be selected without undue experimentation. Therefore, amore detailed description with respect to the modification of materialswill be omitted. Also, the kinds of materials for the first maskpatterns 301 and second masks patterns 302 are not, however, limited tothe foregoing exemplified materials.

Referring to FIGS. 23, 26 and 27, a sacrificial mask pattern 310 isformed on the mask structure 300S (S42), and then a consumable etchprocess S43, which uses the mask structure 300S and the sacrificialpattern 310 as a consumable etch mask, is performed. The consumable etchprocess S43 may include a plurality of sub-patterning processes, andeach of the sub-patterning processes may include a horizontal etchprocess and a vertical etch process. The sacrificial mask pattern 310may be formed by using the same method and materials as that of theforegoing first embodiment.

The horizontal etch process may be performed so as to gradually reducean area occupied by the mask structure 300S and the sacrificial maskpattern 310, and may include a first horizontal etch processhorizontally etching a sidewall of the sacrificial mask pattern 310, anda second horizontal etch process selectively removing at least one ofmask patterns constituting the mask structure 300S, similarly with theforegoing first embodiment. As aforementioned, materials for the firstmask patterns 301 and second mask patterns 302 according to the presentembodiment may be different from those according to the firstembodiment. Due to this difference, the first second horizontal etchprocess of the present embodiment may be different from that of thefirst embodiment. However, it will be understood to those skilled in theart that an optimal solution for the second horizontal etch process maybe obtained without undue experimentation. Therefore, description onmodification from the first embodiment of the second horizontal eachprocess that may be caused by a difference in material type will beomitted.

The vertical etch process may include etching the insulating layers 120and the sacrificial layers 130 by using the sacrificial mask pattern 310and the mask patterns 301, 302 as etch masks. In the vertical etchprocess along a vertical direction, the sub-patterning process may beperformed so as to remove one of the sacrificial layers 130 and one ofthe insulating layers 120. Also, in the vertical etch process, along thehorizontal direction, regions of the sacrificial layers 130 and theinsulating layers 120 etched in the vertical etch process may be belowthe mask patterns 301, and 302 removed through the correspondingsub-patterning process and the sub-patterning process performedpreviously to the corresponding sub-patterning process. That is, thesacrificial layer 130 and the insulating layer 120, which are patternedin a previous sub-patterning process, may be further patterned during asubsequent sub-patterning process.

Therefore, the cumulative number of the sub-patterning processesperformed with respect to the thin layer structure 100 may varyaccording to a distance from the cell array region CAR or thesemiconductor patterns 205. According to a difference in the cumulativenumber of the sub-patterning processes, as shown in FIGS. 26 and 27, thethin layer structure 100 may be formed so as to have a stepwise contactstructure in the word line contact region WCTR.

As aforementioned, the vertical etch process according to the presentembodiment is performed not with respect to the horizontalinterconnection structure 260S described in the first embodiment butwith respect to the thin layer structure 100 including the sacrificiallayers 130. Due to this difference, the vertical etch process accordingto the present embodiment may be performed by using an etch method orrecipe which is different from that of the first embodiment. However, itwill be understood to those skilled in the art that an optimal solutionfor the vertical etch process may be obtained without undueexperimentation. Therefore, a description regarding modification of thefirst embodiment with respect to the vertical etch process will beomitted.

Referring to FIGS. 23 and 28 through 30, the sacrificial mask patterns310 is removed and the sacrificial layers 130 are selectively removedfrom the thin layer structure 100 to form recess regions 240.Thereafter, the recess regions 240 are filled to form conductivepatterns 260 facing sidewalls of the semiconductor patterns 205 (S3),and word line plugs WPLG connected with the conductive patterns 260 areformed (S5). Consequently, after the thin layer structure 100 is formedin a stepwise shape through the consumable etch process S43, theconductive patterns 260 are formed.

The forming of the recess regions 240 may include forming trenches 230exposing sidewalls of the sacrificial layers 130 in the thin layerstructure 100 as shown in FIG. 28 (S31), and selectively removing theexposed sacrificial layers 130 as shown in FIG. 29. The forming of therecess regions 240 may be performed by the same method as that of theembodiment described with reference to FIGS. 7 and 8.

Furthermore, as shown in FIG. 28, along the direction of the length, thetrench 230 may be formed to extend from the cell array region CAR andcross the word line contact region WCTR. According to the firstembodiment, as shown in FIG. 8, the trench 230 is formed so as not tocross the word line contact region WCTR so that the word lines WL may beformed in a comb shape or finger shape. However, according to the secondembodiment, the trench 230 may be formed to cross the word line contactregion WCTR and thus separate the thin layer structure 100 into aplurality of portions arranged horizontally. Alternatively, the trench230 described with reference to FIG. 28 may be applied to the firstembodiment, and the trench 230 described with reference to FIG. 7 may beapplied to the second embodiment.

The forming S3 of the conductive patterns 260 may be performed by thesame method as that of the embodiment described with reference to FIGS.9 and 10. According to this method including replacing the sacrificiallayers 130 with a conductive material, the recess regions 240 may befilled with an information storage layer 250 and conductive patterns 260as shown in FIG. 30, and the conductive patterns 260 may be spatiallyseparated by an electrode separating pattern (not illustrated) fillingthe trench 230.

After the word line plugs WPLG are formed, global word lines GWLconnected with the word line plugs WPLG may be additionally formed asshown in FIG. 30. In addition, bit line plugs BPLG connected with thesemiconductor patterns 205 and bit lines BL connecting the bit lineplugs BPLG may be formed. The word line plugs WPLG, the global wordlines GWL, the bit line plugs BPLG and the bit lines BL may be formed bythe same method as that in the embodiment described with reference toFIG. 18.

As discussed above, since the thin layer structure 100 including thesacrificial layers 130 is separated into the plurality of portionsarranged horizontally, each of the conductive patterns 260 formedthrough the replacing process S32 may be separated horizontally by thetrenches 230 to form a plurality of conductive lines. Therefore, theword line plugs WPLG according to the present embodiment are formed soas to be respectively connected with the conductive patterns 260separated horizontally by the trench 230 as shown in FIG. 30. Further,the conductive patterns 260 disposed at the same height may beelectrically connected with one of the global word lines GSL. For thispurpose, an intermediate interconnection line IL connecting theplurality of word line plugs WPLG and an intermediate plug IPLGconnecting the global word lines GWL may be disposed between the wordline plugs WPLG and the global word lines GWL. According to anembodiment, a longer axis of the intermediate interconnection line ILmay be disposed in a direction parallel to a longer axis of the bit lineBL as shown in the figures.

FIGS. 31 and 32 are a plan view and graph for describing one oftechnical features that may found in a three dimensional semiconductordevice according to embodiments based on the technical spirit of theinventive concept. FIG. 31 is a detailed plan view of region 99expressed by a dotted line of FIG. 1.

Referring to FIG. 31, longer axes of the conductive pattern 260 (notillustrated) and the bit line BL may be arranged parallel to the x-axisand y-axis, respectively. As explained above, since the conductivepatterns 260 form a stepwise structure in the word line contact regionWCTR, distances L1, L2, L3, L4, L5 between one sidewall of theconductive patterns 260 and one sidewall of the bit line BL may bedifferent depending on stack heights of the corresponding conductivepatterns as shown in the figures. That is, where n indicates thestacking order of the conductive patterns 260, as the distance betweenthe substrate 10 and the conductive pattern 260 increases, the distanceL_(n) between the sidewall of the conductive pattern 260 and thesidewall of the bit line BL closest to the word line contact regionWCTR, decreases.

Referring to FIG. 32, a vertical axis of the graph indicates a distance(i.e., L_(n)) between one sidewall of the conductive pattern 260 and onesidewall of the bit line BL closest to the conductive pattern 260, and ahorizontal axis of the graph indicates a y-distance of a point (i.e., ay coordinate of a selected point) on one sidewall of a selectedconductive pattern. In one conductive pattern, the distance Ln may besubstantially independent from the y-coordinate. That is, since a curveof the distance Ln is positioned within an envelope having a narrowwidth, the curve is substantially uniform regardless of they-coordinate. In other words, the conductive pattern 260 according tothe foregoing embodiments may be substantially a straight line globallyor locally.

According to embodiments based on the technical spirit of the inventiveconcept, the uniformity of the distance Ln or the straightness of theconductive pattern may be expressed quantitatively by the below equation1.

$\begin{matrix}{{{{L_{n}\left( y_{m} \right)} - {L_{n}\left( y_{0} \right)}} < \frac{{L_{n}\left( y_{0} \right)} - {L_{n + 1}\left( y_{0} \right)}}{s}},{{{for}\mspace{14mu}{{y_{m} - y_{0}}}} < y_{1}}} & \left\langle {{Equation}\mspace{14mu} 1} \right\rangle\end{matrix}$

where y₀ is a y coordinate of a reference point, y_(m) is a y coordinateof a measured point, L_(n)(y_(m)) is a distance between a sidewall of ann-th conductive pattern in which the y coordinate is y_(m), and asidewall of the bit line closest to the sidewall of the n-th conductivepattern, s is a value between about 2 to 20, and y₁ is a length shorterthan a length of bit line BL.

According to a first aspect of the described embodiments, the parametery₁ determining the range of measured points may be about 80% to about100% of a length of the bit line BL or a side length of a memory blockconstituting the cell array region CAR. In this case, in the word linecontact region WCTR, the sidewall of the n-th conductive pattern mayhave a global straightness. According to a second aspect of thedescribed embodiments, the parameter y₁ may be about 80% to about 120%of a minimum width of the mask patterns 301, 302 or a spacing betweenthe bit lines BL. In this case, the sidewall of the n-th conductivepattern may have a local straightness. The foregoing first aspect may bea result of the local straightness globally extending in the lengthdirection of the bit line BL. A three dimensional semiconductor deviceaccording to embodiments of the inventive concept may have one of thefirst aspect and the second aspect, or may have both of the first aspectand the second aspect.

According to the foregoing embodiments, the mask patterns 301, 302 usedin performing the consumable etch process S43 may allow the sidewall ofthe conductive pattern 260 to have the foregoing local straightness orglobal straightness. In particular, unlike the foregoing embodiments, ifthe mask patterns 301, 302 are not used in the consumable etch processS43, the sidewall of the sacrificial mask pattern 310 may be deformedfrom its original form as a result of repeated performing of thesub-patterning processes.

For example, though the sidewall of the sacrificial mask pattern 310 isfirst formed flat, in the case where the sub-patterning processes arerepeated, the roughness of the sidewall may increase locally. In thiscase, the sidewall of the conductive pattern disposed at an upperportion may have a decreased local straightness, compared with asidewall of the conductive pattern positioned at a lower portion.

Also, a corner of a pattern having a hexahedral shape may be etcheddeeper than a central portion thereof. Therefore, if the sub-patterningprocesses are repeated, a corner region of the sacrificial mask pattern310 may be rounded gradually. In this case, in the word line contactregion WCTR, the sidewall of the conductive pattern may be formed in anarc shape at first and second edges Edge 1 and Edge 2. That is, in thecase where the mask patterns 301, 302 are not used in the consumableetch process S43, the conductive patterns 260 may not have a globalstraightness.

In addition, it is difficult to globally control a position of thesidewall of the sacrificial mask pattern 310 while the sub-patterningprocesses are repeated. Therefore, in each of the sub-patterningprocesses, the position of the sidewall of the sacrificial mask pattern310 may be changed over a wide range, and such change is not easy tocontrol. According to experiments conducted by the inventors, it wasconfirmed that the range of changes may be greater than a spacingbetween the word line contact plugs WPLG. On the other hand, if the maskpatterns 301, 302 are not used in the consumable etch process S43, thechange in the position of the sidewall of the sacrificial mask pattern310 may cause a change in the position of a region (i.e., a top surfaceof an underlying conductive pattern exposed by a predeterminedconductive pattern) for contacting the word line contact plug WPLG, sothat an unintended electrical connection (e.g., short) between the wordline contact plug and the conductive pattern 260 may be caused.

However, when the mask patterns 301, 302 are used in the consumable etchprocess S43 as in the foregoing embodiments based on the technicalspirit of the inventive concept, the sacrificial mask pattern 310 isused as a mask for selectively removing one of the mask patterns 301,302, and the mask patterns 301, 302 are used as an etch mask forpatterning the thin layer structure 100 or the horizontalinterconnection structure 260S. That is, in the word line contact regionWCTR, the positions of the sidewalls of the conductive patterns 260 aredefined not by the sacrificial mask pattern 310 but by the mask patterns301, 302. Therefore, the foregoing technical limitations that may occurwhen the mask patterns 301, 302 are not used in the consumable etchprocess S43 can be prevented.

FIGS. 33 through 35 are perspective views for describing a threedimensional semiconductor device according to a third embodiment basedon the technical spirit of the inventive concept. In detail, FIGS. 33and 34 are perspective views of a semiconductor device viewed in twodifferent directions as a third embodiment, and FIG. 35 is a perspectiveview illustrating an arrangement of word lines in this semiconductordevice.

Referring to FIGS. 33 and 34, the semiconductor device according to thisembodiment may include bit lines BL above a substrate 10, a gatestructure GTS between the substrate 10 and the bit lines BL, a commonsource line CSL between the gate structure GTS and the bit lines BL, anda pipe structure PS penetrating the gate structure GTS. The pipestructure PS may have a U-shaped structure having both ends that may berespectively connected with the bit lines BL and the common source lineCSL (not illustrated). A plug PLG and a pad PAD may be further disposedbetween the gate structure GTS and the bit line BL for electricalconnection therebetween.

The gate structure GTS may include a plurality of word lines WLsequentially stacked, and select lines disposed between the word linesWL and the bit lines BL. The select line may include string select linesSSL disposed between the word line WL and the pad PAD, and a groundselect line GSL disposed between the common source line CSL and the wordline WL. The string select lines SSL and the ground select line GSL maybe formed by using a process for forming the word lines WL or may beformed by using a process independent from the process for forming theword lines WL.

The word lines WL may further include one pair of global word lines GWLrespectively disposed at corresponding ends of the word lines WL (notillustrated). As shown in FIG. 35, even word lines may be electricallyconnected with one of the one pair of global word lines and odd wordlines may be electrically connected with the other of the one pair ofglobal word lines.

The pipe structure PS may include a semiconductor pattern 205 and aninformation storage layer 250 covering an outer wall of thesemiconductor pattern 205. Each of the semiconductor patterns 205 mayinclude one pair of vertical semiconductor patterns 205 a penetratingthe gate structure GTS, and a horizontal semiconductor pattern 205 bdisposed below the gate structure GTS and connecting the verticalsemiconductor patterns 205 a. The two vertical semiconductor patterns205 a constituting the single semiconductor pattern 205 may penetratethe word lines WL separated from each other as shown in FIGS. 33 and 34.Also, the horizontal semiconductor patterns 205 b may extend from aportion disposed below one word line WL to a portion disposed belowanother word line WL adjacent to the one word line WL.

The word lines WL may be configured to control an electric potential ofthe semiconductor pattern 205. Therefore, an electrical connectionbetween the bit line BL and the common source line CSL may be controlledby the word lines WL, the string select line SSL and the ground selectline GSL. According to the above configuration, the semiconductorpattern 205 may constitute a unit cell string of a NAND type cell arraystructure.

According to an embodiment, the gate structure GTS may be formed byusing the fabricating method disclosed in the foregoing first embodimentor second embodiment. Also, according to an embodiment, the informationstorage layer 250 may be formed so as to cover the outer wall of thesemiconductor pattern 205 as shown in FIGS. 33 and 34. According toanother embodiment, the information storage layer 250 may extendhorizontally from the semiconductor pattern 205 and the sidewalls of theword lines WL to cover top and bottom surfaces of the word line WL. Forexample, the semiconductor pattern 205 and the information storage layer250 may be formed by modifying and applying the fabricating methods ofthe embodiments described with reference to FIGS. 2 through 30. In thiscase, as shown in FIG. 18, the information storage layer 250 may coverthe top and bottom surfaces of the conductive pattern 260 (i.e., wordline WL).

In some embodiments, the word lines WL may form a stepwise structure asshown in FIG. 35 by using the fabricating method of the foregoing firstembodiment. In detail, as shown in FIG. 2, after the mask patterns 301,302 and the sacrificial mask pattern 310 are sequentially formed on theword lines WL, the word lines WL may be patterned by using the maskpatterns 301, 302 and the sacrificial mask pattern 310 as a consumableetch mask (S43). Likewise, since the mask patterns 301, 302 are used asan etch mask for patterning the word lines WL, the foregoing technicallimitations that may occur when the mask patterns 301, 302 are not usedin the consumable etch process S43 can be prevented with thisembodiment. Also, the three dimensional semiconductor device accordingto this embodiment may have technical features described with referenceto FIGS. 31 and 32.

FIG. 36 is a block diagram of a memory card 1200 for supportinghigh-capacity data storage capability provided with a flash memorydevice 1210 according to an embodiment of the inventive concept. Thememory card 1200 may include a memory controller 1220 that controls dataexchange between a host and the flash memory device 1210. In someembodiments, some of the elements shown in FIG. 36 such as the memorycontroller 1220 and/or the flash memory device may be included in asingle semiconductor device as a system-on-chip (SoC).

An SRAM 1221 is used as a working memory of a central processing unit(CPU) 1222. A host interface 1223 has data exchange protocol of a hostconnected to the memory card 1200. An error correction code (ECC) 1224detects and corrects an error included in data read from the multi-bitflash memory device 1210. A memory interface 1225 interfaces with theflash memory device 1210 according to the inventive concept. The CPU1222 performs an overall control operation for data exchange of thememory controller 1220. Although not shown in the drawings, it will beapparent to those skilled in the art that the memory card 1200 mayfurther include a ROM (not shown) storing code data for interfacing withthe host.

According to the flash memory device and the memory card or the memorysystem of the inventive concept, a memory system with high reliabilitycan be provided through the flash memory device 1210 in which erasecharacteristics of dummy cells are improved. Especially, the flashmemory device according to embodiments of the present invention can beprovided in a memory system such as solid state disk (hereinafterreferred to as ‘SSD’). In this case, read error caused by dummy cellscan be prevented to realize a memory system with high reliability.

FIG. 37 is a block diagram of an information processing system 1300provided with a flash memory system 1310 according to some embodimentsof the inventive concept. Referring to FIG. 37, the flash memory system1310 according to the inventive concept is provided in an informationprocessing system, such as a mobile device and a desktop computer. Theinformation processing system 1300 according to the inventive conceptincludes the flash memory system 1310, a modem 1320, a centralprocessing unit (CPU) 1330, a RAM 1340, and a user interface 1350 thatare electrically connected to a system bus 1360, respectively. The flashmemory system 1310 may have substantially the same configuration as theforegoing memory system or flash memory system. Data processed by theCPU 1330 or external input data is stored in the flash memory system1310. Herein, the foregoing flash memory system 1310 may be configuredwith a semiconductor disk device (SSD). In this case, the informationprocessing system 1300 can stably store high-capacity data in the flashmemory system 1310. Also, as the reliability of the semiconductor deviceis improved, the flash memory system 1310 can save resources consumed inerror correction, thus providing a high-speed data exchange function tothe information processing system 1300. Although not illustrated in thedrawings, it will be apparent to those skilled in the art that theinformation processing system 1300 may further include an applicationchipset, a camera image processor (CIS), and an input/output device.

Also, the flash memory device or the memory system according to theinventive concept may be mounted in various types of packages. Examplesof the packages of the flash memory device or the memory systemaccording to the inventive concept include Package on Package (PoP),Ball Grid Arrays (BGAs), Chip Scale Packages (CSPs), Plastic Leaded ChipCarrier (PLCC), Plastic Dual In-line Package (PDIP), Die in Waffle Pack,Die in Wafer Form, Chip On Board (COB), Ceramic Dual In-line Package(CERDIP), Plastic Metric Quad Flat Pack (MQFP), Thin Quad Flat Pack(TQFP), Small Outline Integrated Circuit (SOIC), Shrink Small OutlinePackage (SSOP), Thin Small Outline Package (TSOP), Thin Quad Flat Pack(TQFP), System In Package (SIP), Multi Chip Package (MCP), Wafer-levelFabricated Package (WFP), and Wafer-level Processed Stack Package (WSP).

According to the embodiments based on the technical spirit of theinventive concept, mask patterns formed below a sacrificial mask patternare used as an etch mask in a consumable etch process. In detail, thesacrificial mask pattern is used as an etch mask for selectivelyremoving one of the mask patterns, and the mask patterns are used as anetch mask in a patterning process for forming a stepwise structure. As aresult, sidewalls of the word lines are defined not by the sacrificialmask pattern but by the mask patterns, and a contact region for contactbetween a word line contact plug and the word lines may be also definednot by the sacrificial mask pattern but by the mask patterns. Therefore,the sidewalls of the word lines may be formed in parallel with eachother, locally and globally. In addition, a positional change of thecontact region and an unintended electrical connection (e.g., short)between the word line contact plugs and the word lines due to thepositional change can be prevented. The above-disclosed subject matteris to be considered illustrative, and not restrictive, and the appendedclaims are intended to cover all such modifications, enhancements, andother embodiments, which fall within the true spirit and scope of thepresent disclosure. Thus, to the maximum extent allowed by law, thescope of the present disclosure is to be determined by the broadestpermissible interpretation of the following claims and theirequivalents, and shall not be restricted or limited by the foregoingdetailed description.

Reference throughout this specification to “one embodiment” “someembodiments” or “an embodiment” means that a particular feature,structure, or characteristic described in connection with the embodimentis included in at least one embodiment of the present invention. Thus,the appearances of the phrases “in one embodiment,” “some embodiments,”or “in an embodiment” in various places throughout this specificationare not necessarily all referring to the same embodiment. Furthermore,the particular features, structures, or characteristics may be combinedin any suitable manner in one or more embodiments.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of the present invention. Variousoperations will be described as multiple discrete steps performed in amanner that is most helpful in understanding the invention. However, theorder in which the steps are described does not imply that theoperations are order-dependent or that the order that steps areperformed must be the order in which the steps are presented.

What is claimed is:
 1. A three dimensional semiconductor devicecomprising: a substrate comprising a cell array region and a contactregion; an interconnection structure comprising a plurality of stackedhorizontal electrodes overlying the substrate; and bit lines disposed onthe cell array region, wherein widths of the horizontal electrodesdecrease as the horizontal electrodes are further away from thesubstrate, so that the interconnection structure has a stepwise shape inthe contact region, a sidewall of one of the horizontal electrodes meetsthe below equation${{{L_{n}\left( y_{m} \right)} - {L_{n}\left( y_{0} \right)}} < \frac{{L_{n}\left( y_{0} \right)} - {L_{n + 1}\left( y_{0} \right)}}{s}},$ within a range of y_(m) meeting the condition of |y_(m)−y₀|<y₁, wherey₀ is a y coordinate of a reference point, y_(m) is a y coordinate of ameasured point, L_(n)(y_(m)) is a distance between a sidewall of a n-thconductive pattern in which the y coordinate is y_(m), and a sidewall ofthe bit line most adjacent to the sidewall of the n-th conductivepattern, s is a value between about 2 to 20, and y₁ is a length shorterthan a length of bit line.
 2. The three dimensional semiconductor deviceof claim 1, wherein the parameter y is about 80% to about 100% of thelength of the bit line.
 3. The three dimensional semiconductor device ofclaim 1, wherein the parameter y₁ is about 80% to about 120% of adistance between adjacent two bit lines.
 4. The three dimensionalsemiconductor device of claim 1, wherein one of the horizontalelectrodes comprises two portions having different thicknessesrespectively in the contact region, thus having a stepwise shape.
 5. Thethree dimensional semiconductor device of claim 1, wherein thesemiconductor device is included in an SSD.